BD13910S
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 80V 1.5A TO126-3
TRANS NPN 80V 1.5A TO126-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 1.5 A 1.25 W Genomgående hål TO-126-3
Bipolär (BJT) Transistor NPN 80 V 1.5 A 1.25 W Genomgående hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The BD13910S is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 1.5A, making it suitable for medium power switching and amplification tasks. The transistor is housed in a TO-126-3 package, which allows for efficient thermal management and easy integration into circuit designs. With a power dissipation capability of 1.25W, it is ideal for use in audio amplifiers, signal processing, and general-purpose switching applications.
The BD13910S is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 1.5A, making it suitable for medium power switching and amplification tasks. The transistor is housed in a TO-126-3 package, which allows for efficient thermal management and easy integration into circuit designs. With a power dissipation capability of 1.25W, it is ideal for use in audio amplifiers, signal processing, and general-purpose switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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