BD13910S
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
POWER BIPOLAR TRANSISTOR, 1.5A,
POWER BIPOLAR TRANSISTOR, 1.5A,
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 1.5 A 1.25 W Genomgående hål TO-126-3
Bipolär (BJT) Transistor NPN 80 V 1.5 A 1.25 W Genomgående hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The BD13910S is a power bipolar transistor designed for high-performance applications. This NPN transistor features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 80 V, making it suitable for various switching and amplification tasks. With a power dissipation capability of 1.25 W, it is housed in a TO-126-3 package, allowing for efficient thermal management. Its through-hole mounting style ensures ease of integration into circuit boards, making it ideal for both prototyping and production environments.
The BD13910S is a power bipolar transistor designed for high-performance applications. This NPN transistor features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 80 V, making it suitable for various switching and amplification tasks. With a power dissipation capability of 1.25 W, it is housed in a TO-126-3 package, allowing for efficient thermal management. Its through-hole mounting style ensures ease of integration into circuit boards, making it ideal for both prototyping and production environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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