BCW89,215
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA BCW89 - SMALL SIGNAL BI
NEXPERIA BCW89 - SMALL SIGNAL BI
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 100 mA 150 MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 60 V 100 mA 150 MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA BCW89 is a small signal bipolar junction transistor (BJT) designed for PNP applications. It operates with a maximum collector-emitter voltage of 60 V and a collector current of 100 mA, making it suitable for low-power switching and amplification tasks. With a transition frequency of 150 MHz and a power dissipation of 250 mW, this surface-mounted device is ideal for high-frequency applications. Packaged in a TO-236AB form factor, it offers compact dimensions for space-constrained designs, ensuring efficient performance in various electronic circuits.
The NEXPERIA BCW89 is a small signal bipolar junction transistor (BJT) designed for PNP applications. It operates with a maximum collector-emitter voltage of 60 V and a collector current of 100 mA, making it suitable for low-power switching and amplification tasks. With a transition frequency of 150 MHz and a power dissipation of 250 mW, this surface-mounted device is ideal for high-frequency applications. Packaged in a TO-236AB form factor, it offers compact dimensions for space-constrained designs, ensuring efficient performance in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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