BCW89,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 60V 0.1A TO236AB
TRANS PNP 60V 0.1A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 100 mA 150MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 60 V 100 mA 150MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The BCW89 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a maximum collector-emitter voltage of 60 V and a collector current of 100 mA, with a DC current gain (hFE) of 90 at VCE = -5 V. This surface-mounted device (SMD) is housed in a compact TO-236AB package, suitable for various electronic circuits requiring low power dissipation of 250 mW.
The BCW89 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a maximum collector-emitter voltage of 60 V and a collector current of 100 mA, with a DC current gain (hFE) of 90 at VCE = -5 V. This surface-mounted device (SMD) is housed in a compact TO-236AB package, suitable for various electronic circuits requiring low power dissipation of 250 mW.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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