BC859B,215
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA BC859B - SMALL SIGNAL B
NEXPERIA BC859B - SMALL SIGNAL B
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA BC859B is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. With a transition frequency of 100 MHz and a total power dissipation of 250 mW, it is suitable for low noise input stages in audio frequency equipment. The device is housed in a surface-mounted SOT23 package, ensuring compact integration in electronic circuits.
The NEXPERIA BC859B is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. With a transition frequency of 100 MHz and a total power dissipation of 250 mW, it is suitable for low noise input stages in audio frequency equipment. The device is housed in a surface-mounted SOT23 package, ensuring compact integration in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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