BC859B,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 30V 0.1A TO236AB
TRANS PNP 30V 0.1A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 30 V 100 mA 100 MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 30 V 100 mA 100 MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The BC859B is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. This surface-mounted device, housed in a TO-236AB package, features a transition frequency of 100 MHz and a total power dissipation of 250 mW, making it suitable for low noise input stages in audio frequency equipment.
The BC859B is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. This surface-mounted device, housed in a TO-236AB package, features a transition frequency of 100 MHz and a total power dissipation of 250 mW, making it suitable for low noise input stages in audio frequency equipment.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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