BC858B,215
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA BC858B - SMALL SIGNAL B
NEXPERIA BC858B - SMALL SIGNAL B
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 30 V 100 mA 100 MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 30 V 100 mA 100 MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA BC858B is a PNP bipolar junction transistor (BJT) designed for small signal applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 250 mW, this surface-mounted device is housed in a TO-236AB package, making it suitable for compact circuit designs. Its small size and high-frequency capabilities make it ideal for various electronic applications, including amplification and switching.
The NEXPERIA BC858B is a PNP bipolar junction transistor (BJT) designed for small signal applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 250 mW, this surface-mounted device is housed in a TO-236AB package, making it suitable for compact circuit designs. Its small size and high-frequency capabilities make it ideal for various electronic applications, including amplification and switching.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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