BC858B,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 30V 0.1A TO236AB
TRANS PNP 30V 0.1A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 30 V 100 mA 100MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The BC858B is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a maximum collector-emitter voltage of 30 V and a collector current of 100 mA, with a transition frequency of 100 MHz. Packaged in a TO-236AB surface mount configuration, it offers low power dissipation of 250 mW, making it suitable for compact electronic designs.
The BC858B is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a maximum collector-emitter voltage of 30 V and a collector current of 100 mA, with a transition frequency of 100 MHz. Packaged in a TO-236AB surface mount configuration, it offers low power dissipation of 250 mW, making it suitable for compact electronic designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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