BAS116LSYL
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
DIODE GP 85V 325MA DFN1006BD-2
DIODE GP 85V 325MA DFN1006BD-2
Detaljerad specifikation
Detaljerad specifikation
Diode 85 V 325mA ytmonterad DFN1006BD-2
Diode 85 V 325mA ytmonterad DFN1006BD-2
Beskrivning (eng)
Beskrivning (eng)
The BAS116LSYL is a low-leakage diode with a maximum repetitive peak reverse voltage of 85 V and a forward current rating of 325 mA. It features a compact DFN1006BD-2 surface mount package, low leakage current of 5 nA, and a reverse recovery time of 3 µs, making it suitable for general-purpose switching applications.
The BAS116LSYL is a low-leakage diode with a maximum repetitive peak reverse voltage of 85 V and a forward current rating of 325 mA. It features a compact DFN1006BD-2 surface mount package, low leakage current of 5 nA, and a reverse recovery time of 3 µs, making it suitable for general-purpose switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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