AIGW50N65F5XKSA1
Tillverkare
INFINEON
Datablad
Datablad
Specifikation
Specifikation
IGBT 650V TO247-3
IGBT 650V TO247-3
Detaljerad specifikation
Detaljerad specifikation
IGBT Trench 650 V 270 W Genomgående hål PG-TO247-3-41
IGBT Trench 650 V 270 W Genomgående hål PG-TO247-3-41
Beskrivning (eng)
Beskrivning (eng)
The AIGW50N65F5XKSA1 is a high-speed IGBT (Insulated Gate Bipolar Transistor) featuring a 650V breakdown voltage and a maximum current rating of 50A. Utilizing TRENCHSTOP™ 5 technology, it offers low gate charge and high efficiency for hard switching and resonant topologies. The device is rated for a maximum junction temperature of 175°C and is suitable for various applications including off-board and on-board chargers, DC/DC converters, and power-factor correction.
The AIGW50N65F5XKSA1 is a high-speed IGBT (Insulated Gate Bipolar Transistor) featuring a 650V breakdown voltage and a maximum current rating of 50A. Utilizing TRENCHSTOP™ 5 technology, it offers low gate charge and high efficiency for hard switching and resonant topologies. The device is rated for a maximum junction temperature of 175°C and is suitable for various applications including off-board and on-board chargers, DC/DC converters, and power-factor correction.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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