A2V09H400-04NR3
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 48V OM780-4
RF MOSFET LDMOS 48V OM780-4
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 688 mA 720MHz ~ 960MHz 17.9dB 107W OM-780-4L
RF Mosfet 48 V 688 mA 720MHz ~ 960MHz 17.9dB 107W OM-780-4L
Beskrivning (eng)
Beskrivning (eng)
The A2V09H400-04NR3 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a typical output power of 107W, covering a frequency range of 720 to 960 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, achieving a power gain of 17.9 dB and drain efficiency of 55.8%. It is optimized for digital predistortion systems, ensuring reliable operation in demanding environments.
The A2V09H400-04NR3 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a typical output power of 107W, covering a frequency range of 720 to 960 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, achieving a power gain of 17.9 dB and drain efficiency of 55.8%. It is optimized for digital predistortion systems, ensuring reliable operation in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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