A2V09H400-04NR3
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 48V OM780-4
RF MOSFET LDMOS 48V OM780-4
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 48 V 688 mA 720MHz ~ 960MHz 17.9dB 107W OM-780-4L
RF Mosfet 48 V 688 mA 720MHz ~ 960MHz 17.9dB 107W OM-780-4L
Beskrivning (eng)
Beskrivning (eng)
The A2V09H400-04NR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at 48V, it delivers a maximum drain current of 688 mA and operates efficiently within the frequency range of 720 MHz to 960 MHz. With a power gain of 17.9 dB and a maximum output power of 107W, this device is ideal for RF amplification in various communication systems. Its robust design ensures reliability in demanding environments, making it suitable for both commercial and industrial applications.
The A2V09H400-04NR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at 48V, it delivers a maximum drain current of 688 mA and operates efficiently within the frequency range of 720 MHz to 960 MHz. With a power gain of 17.9 dB and a maximum output power of 107W, this device is ideal for RF amplification in various communication systems. Its robust design ensures reliability in demanding environments, making it suitable for both commercial and industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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