2SK2009(TE85L,F)
Tillverkare
TOSHIBA
Detaljerad specifikation
Detaljerad specifikation
TOSHIBA - 2SK2009(TE85L,F) - Effekt MOSFET, N-kanal, 30 V, 200 mA, 2 ohm, TO-236MOD, ytmonterad.
TOSHIBA - 2SK2009(TE85L,F) - Effekt MOSFET, N-kanal, 30 V, 200 mA, 2 ohm, TO-236MOD, ytmonterad.
Beskrivning (eng)
Beskrivning (eng)
The TOSHIBA 2SK2009(TE85L,F) is a N-channel Power MOSFET designed for high-speed switching and analog switch applications. It features a maximum drain-source voltage of 30 V, a drain current of 200 mA, and a low on-state resistance of RDS(on) = 1.2 Ω. The device operates with a low gate threshold voltage of 0.5 to 1.5 V and offers excellent switching times of ton = 0.06 μs and toff = 0.12 μs, making it suitable for compact electronic designs.
The TOSHIBA 2SK2009(TE85L,F) is a N-channel Power MOSFET designed for high-speed switching and analog switch applications. It features a maximum drain-source voltage of 30 V, a drain current of 200 mA, and a low on-state resistance of RDS(on) = 1.2 Ω. The device operates with a low gate threshold voltage of 0.5 to 1.5 V and offers excellent switching times of ton = 0.06 μs and toff = 0.12 μs, making it suitable for compact electronic designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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