2PB709BSL,215
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA 2PB709 - SMALL SIGNAL B
NEXPERIA 2PB709 - SMALL SIGNAL B
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW ytmonterad TO-236AB
Bipolar (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA 2PB709 is a small signal PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 200 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 200 MHz and a power dissipation of 250 mW, this surface-mounted device is housed in a compact TO-236AB package, ensuring efficient thermal management and space-saving design in electronic circuits.
The NEXPERIA 2PB709 is a small signal PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 200 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 200 MHz and a power dissipation of 250 mW, this surface-mounted device is housed in a compact TO-236AB package, ensuring efficient thermal management and space-saving design in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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