2PB709BSL,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 50V 0.2A TO236AB
TRANS PNP 50V 0.2A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The Nexperia 2PB709BSL is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a collector-emitter voltage of 50 V and a collector current of 200 mA, with a maximum power dissipation of 250 mW. This surface-mounted device (TO-236AB) features two current gain selections and is suitable for switching and amplification tasks in various electronic circuits.
The Nexperia 2PB709BSL is a PNP bipolar junction transistor designed for general-purpose applications. It operates at a collector-emitter voltage of 50 V and a collector current of 200 mA, with a maximum power dissipation of 250 mW. This surface-mounted device (TO-236AB) features two current gain selections and is suitable for switching and amplification tasks in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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