2N7002-G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
FET 60V 5.0 OHM SOT23
FET 60V 5.0 OHM SOT23
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 115mA (Tc) 200mW (Tc) ytmonterad SOT-23-3
N-Kanal 60 V 115mA (Tc) 200mW (Tc) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The 2N7002-G is an N-Channel enhancement mode field effect transistor (FET) designed for low-voltage, low-current applications. It features a maximum drain-to-source voltage of 60V, a continuous drain current of 115mA, and a low on-state resistance (RDS(on)) of 5.0 Ohm. This device is housed in a SOT-23 package, providing reliable and fast switching performance.
The 2N7002-G is an N-Channel enhancement mode field effect transistor (FET) designed for low-voltage, low-current applications. It features a maximum drain-to-source voltage of 60V, a continuous drain current of 115mA, and a low on-state resistance (RDS(on)) of 5.0 Ohm. This device is housed in a SOT-23 package, providing reliable and fast switching performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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