2N7002-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 115MA SOT23
MOSFET N-CH 60V 115MA SOT23
Detaljerad specifikation
Detaljerad specifikation
N-kanal 60 V 115mA (Tj) 360mW (Ta) ytmonterad SOT-23 (TO-236AB)
N-kanal 60 V 115mA (Tj) 360mW (Ta) ytmonterad SOT-23 (TO-236AB)
Beskrivning (eng)
Beskrivning (eng)
The 2N7002 is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (BVDSS) of 60V and a continuous Drain Current (ID) of 115mA. It features low on-state resistance (RDS(on)) of 7.5Ω at VGS of 5V and operates efficiently in a wide temperature range from -55°C to +150°C. This surface-mounted device is ideal for applications requiring fast switching speeds and low power drive requirements.
The 2N7002 is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (BVDSS) of 60V and a continuous Drain Current (ID) of 115mA. It features low on-state resistance (RDS(on)) of 7.5Ω at VGS of 5V and operates efficiently in a wide temperature range from -55°C to +150°C. This surface-mounted device is ideal for applications requiring fast switching speeds and low power drive requirements.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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