2N7000
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 350MA TO92-3
MOSFET N-CH 60V 350MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 350mA (Tc) 1W (Tc) Genomgående hål TO-92-3
N-Kanal 60 V 350mA (Tc) 1W (Tc) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The 2N7000 is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 350mA at a case temperature (Tc) of 25°C. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 1W at Tc, it is ideal for switching and amplification applications in various electronic circuits. The 2N7000 is widely used in low-power switching applications, providing efficient performance in compact designs.
The 2N7000 is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 350mA at a case temperature (Tc) of 25°C. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 1W at Tc, it is ideal for switching and amplification applications in various electronic circuits. The 2N7000 is widely used in low-power switching applications, providing efficient performance in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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