2N7000
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET TO92 N 60V 0.2A 5OHM 150C
MOSFET TO92 N 60V 0.2A 5OHM 150C
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 200mA (Ta) 400mW (Ta) Genomgående hål TO-92-3
N-Kanal 60 V 200mA (Ta) 400mW (Ta) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The 2N7000 from onsemi is an N-Channel MOSFET designed for low voltage applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 200mA at a junction temperature of 25°C. With a low on-resistance of 5 ohms and a maximum power dissipation of 400mW, this device is suitable for various switching applications. Packaged in a TO-92-3 through-hole configuration, it is ideal for use in low-power circuits, signal switching, and general-purpose amplification tasks.
The 2N7000 from onsemi is an N-Channel MOSFET designed for low voltage applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 200mA at a junction temperature of 25°C. With a low on-resistance of 5 ohms and a maximum power dissipation of 400mW, this device is suitable for various switching applications. Packaged in a TO-92-3 through-hole configuration, it is ideal for use in low-power circuits, signal switching, and general-purpose amplification tasks.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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