2N6661
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 90V 860MA TO39
MOSFET N-CH 90V 860MA TO39
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Genomgående hål TO-39
N-Kanal 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N6661 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 90V and a continuous Drain Current (ID) of 860mA at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, low input capacitance of 35pF, and fast switching speed of 6ns, making it suitable for high-speed applications.
The 2N6661 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 90V and a continuous Drain Current (ID) of 860mA at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, low input capacitance of 35pF, and fast switching speed of 6ns, making it suitable for high-speed applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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