2N6661
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 90V 350MA TO39
MOSFET N-CH 90V 350MA TO39
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 90 V 350mA (Tj) 6.25W (Tc) Genomgående hål TO-39
N-Kanal 90 V 350mA (Tj) 6.25W (Tc) Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N6661 is an N-Channel enhancement-mode MOSFET designed for high-performance applications. It features a maximum drain-to-source voltage of 90V and a continuous drain current of 350mA, with a power dissipation capability of 6.25W. The device exhibits low on-state resistance (RDS(on)) of 4.0Ω at VGS=10V and fast switching speeds, making it suitable for various applications including motor controls, amplifiers, and power supply circuits.
The 2N6661 is an N-Channel enhancement-mode MOSFET designed for high-performance applications. It features a maximum drain-to-source voltage of 90V and a continuous drain current of 350mA, with a power dissipation capability of 6.25W. The device exhibits low on-state resistance (RDS(on)) of 4.0Ω at VGS=10V and fast switching speeds, making it suitable for various applications including motor controls, amplifiers, and power supply circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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