2N6660
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 990MA TO205AD
MOSFET N-CH 60V 990MA TO205AD
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Genomgående hål TO-205AD (TO-39)
N-Kanal 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Genomgående hål TO-205AD (TO-39)
Beskrivning (eng)
Beskrivning (eng)
The 2N6660 is an N-Channel MOSFET designed for high-efficiency switching applications. It operates at a maximum voltage of 60V and can handle a continuous drain current of 990mA at a case temperature (Tc) of 25°C. The device features a power dissipation capability of 725mW at ambient temperature (Ta) and can dissipate up to 6.25W at case temperature (Tc). Packaged in a TO-205AD (TO-39) through-hole configuration, this MOSFET is suitable for various electronic circuits requiring reliable performance in power management and signal switching.
The 2N6660 is an N-Channel MOSFET designed for high-efficiency switching applications. It operates at a maximum voltage of 60V and can handle a continuous drain current of 990mA at a case temperature (Tc) of 25°C. The device features a power dissipation capability of 725mW at ambient temperature (Ta) and can dissipate up to 6.25W at case temperature (Tc). Packaged in a TO-205AD (TO-39) through-hole configuration, this MOSFET is suitable for various electronic circuits requiring reliable performance in power management and signal switching.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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