2N6660
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 410MA TO39
MOSFET N-CH 60V 410MA TO39
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 410mA (Ta) 6.25W (Tc) Genomgående hål TO-39
N-Kanal 60 V 410mA (Ta) 6.25W (Tc) Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N6660 is an N-Channel enhancement-mode MOSFET designed for high-performance applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 410mA. With low on-state resistance (RDS(on)) of 3.0Ω at VGS=10V, it ensures efficient power handling. The device is suitable for motor controls, amplifiers, and power supply circuits, offering excellent thermal stability and fast switching speeds.
The 2N6660 is an N-Channel enhancement-mode MOSFET designed for high-performance applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 410mA. With low on-state resistance (RDS(on)) of 3.0Ω at VGS=10V, it ensures efficient power handling. The device is suitable for motor controls, amplifiers, and power supply circuits, offering excellent thermal stability and fast switching speeds.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Bengt eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K