2N5116
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
JFET P-CH 30V TO18
JFET P-CH 30V TO18
Detaljerad specifikation
Detaljerad specifikation
JFET P-Kanal 30 V (1.18 in) 500 mW (0.02 W) Genomgående hål TO-18
JFET P-Kanal 30 V (1.18 in) 500 mW (0.02 W) Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The 2N5116 is a P-Channel JFET (Junction Field Effect Transistor) designed for use in various electronic applications. It operates at a maximum voltage of 30V and can handle a power dissipation of up to 500 mW. This device is housed in a TO-18 package, which is suitable for through-hole mounting. The 2N5116 is ideal for low-noise amplification and switching applications, providing reliable performance in analog circuits. Its P-Channel configuration allows for easy integration into complementary circuit designs, making it a versatile choice for engineers.
The 2N5116 is a P-Channel JFET (Junction Field Effect Transistor) designed for use in various electronic applications. It operates at a maximum voltage of 30V and can handle a power dissipation of up to 500 mW. This device is housed in a TO-18 package, which is suitable for through-hole mounting. The 2N5116 is ideal for low-noise amplification and switching applications, providing reliable performance in analog circuits. Its P-Channel configuration allows for easy integration into complementary circuit designs, making it a versatile choice for engineers.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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