2N5116
Tillverkare
CENTRAL SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
JFET P-CH 30V TO18
JFET P-CH 30V TO18
Detaljerad specifikation
Detaljerad specifikation
JFET P-Kanal 30 V (1.18 in) 500 mW (0.02 W) Genomgående hål TO-18
JFET P-Kanal 30 V (1.18 in) 500 mW (0.02 W) Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The Central Semiconductor 2N5116 is a silicon P-Channel JFET designed for switching applications. It features a maximum gate-drain voltage of 30 V, gate-source voltage of 30 V, and a power dissipation of 500 mW. The device operates within a temperature range of -65 to +200 °C, making it suitable for various environments. Its low gate current and high IDSS ratings enhance its performance in electronic circuits.
The Central Semiconductor 2N5116 is a silicon P-Channel JFET designed for switching applications. It features a maximum gate-drain voltage of 30 V, gate-source voltage of 30 V, and a power dissipation of 500 mW. The device operates within a temperature range of -65 to +200 °C, making it suitable for various environments. Its low gate current and high IDSS ratings enhance its performance in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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