2N3700
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 80V 1A TO18
TRANS NPN 80V 1A TO18
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 1 A 100 MHz 500 mW Genomgående hål TO-18
Bipolär (BJT) Transistor NPN 80 V 1 A 100 MHz 500 mW Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The 2N3700 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for power amplification and switching applications. With a transition frequency of 100MHz and a power dissipation capability of 500mW, this transistor is ideal for high-frequency circuits. Packaged in a TO-18 metal can, it offers robust performance in through-hole mounting configurations, ensuring reliability in demanding environments.
The 2N3700 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for power amplification and switching applications. With a transition frequency of 100MHz and a power dissipation capability of 500mW, this transistor is ideal for high-frequency circuits. Packaged in a TO-18 metal can, it offers robust performance in through-hole mounting configurations, ensuring reliability in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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