2N3700
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 80V 1A TO18
TRANS NPN 80V 1A TO18
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 1 A 500 mW Genomgående hål TO-18
Bipolär (BJT) Transistor NPN 80 V 1 A 500 mW Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The 2N3700 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for switching and amplification tasks. With a power dissipation capability of 500 mW, this transistor is housed in a TO-18 metal can package, ensuring robust thermal performance and reliability. Its compact size and efficient operation make it ideal for use in consumer electronics, industrial controls, and signal processing circuits.
The 2N3700 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for switching and amplification tasks. With a power dissipation capability of 500 mW, this transistor is housed in a TO-18 metal can package, ensuring robust thermal performance and reliability. Its compact size and efficient operation make it ideal for use in consumer electronics, industrial controls, and signal processing circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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