2N3019
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 80V 1A TO39
TRANS NPN 80V 1A TO39
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 1 A 100 MHz 800 mW Genomgående hål TO-39
Bipolär (BJT) Transistor NPN 80 V 1 A 100 MHz 800 mW Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N3019 is a silicon planar epitaxial NPN transistor housed in a TO-39 metal case, designed for high-current, high-frequency amplifier applications. It features a collector-emitter voltage of 80 V, a collector current of 1 A, and a transition frequency of 100 MHz, making it suitable for various electronic circuits requiring efficient amplification.
The 2N3019 is a silicon planar epitaxial NPN transistor housed in a TO-39 metal case, designed for high-current, high-frequency amplifier applications. It features a collector-emitter voltage of 80 V, a collector current of 1 A, and a transition frequency of 100 MHz, making it suitable for various electronic circuits requiring efficient amplification.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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