2N3019
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 80V 1A TO5
TRANS NPN 80V 1A TO5
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 1 A 800 mW Genomgående hål TO-5
Bipolär (BJT) Transistor NPN 80 V 1 A 800 mW Genomgående hål TO-5
Beskrivning (eng)
Beskrivning (eng)
The 2N3019 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for medium power switching and amplification tasks. With a power dissipation capability of 800 mW, this TO-5 package transistor is ideal for through-hole mounting in circuit designs requiring reliable performance. Its robust construction ensures durability in demanding environments, making it a preferred choice for engineers.
The 2N3019 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 1A, making it suitable for medium power switching and amplification tasks. With a power dissipation capability of 800 mW, this TO-5 package transistor is ideal for through-hole mounting in circuit designs requiring reliable performance. Its robust construction ensures durability in demanding environments, making it a preferred choice for engineers.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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