2N2907
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 40V 0.6A TO18
TRANS PNP 40V 0.6A TO18
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 40 V 600 mA 400 mW Genomgående hål TO-18
Bipolär (BJT) Transistor PNP 40 V 600 mA 400 mW Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The 2N2907 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and a collector current rating of 600mA, making it suitable for various electronic circuits. The device is housed in a TO-18 metal can package, providing robust mechanical protection and thermal performance. With a power dissipation capability of 400mW, the 2N2907 is ideal for low to medium power applications, ensuring reliable operation in diverse environments.
The 2N2907 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and a collector current rating of 600mA, making it suitable for various electronic circuits. The device is housed in a TO-18 metal can package, providing robust mechanical protection and thermal performance. With a power dissipation capability of 400mW, the 2N2907 is ideal for low to medium power applications, ensuring reliable operation in diverse environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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