2N2907
Tillverkare
MOTOROLA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 40V 0.6A TO18
TRANS PNP 40V 0.6A TO18
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Genomgående hål TO-18
Bipolär (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The 2N2907 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a transition frequency of 200MHz, this transistor is suitable for high-frequency applications. The device is housed in a TO-18 package, making it ideal for through-hole mounting in various electronic circuits. Its power dissipation capability is rated at 1.8W, ensuring reliable performance in demanding environments.
The 2N2907 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a transition frequency of 200MHz, this transistor is suitable for high-frequency applications. The device is housed in a TO-18 package, making it ideal for through-hole mounting in various electronic circuits. Its power dissipation capability is rated at 1.8W, ensuring reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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