2N1893
Tillverkare
MICROCHIP TECHNOLOGY
Specifikation
Specifikation
TRANS NPN 80V 0.5A TO5
TRANS NPN 80V 0.5A TO5
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 500 mA 800 mW Genomgående hål TO-5AA
Bipolär (BJT) Transistor NPN 80 V 500 mA 800 mW Genomgående hål TO-5AA
Beskrivning (eng)
Beskrivning (eng)
The 2N1893 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 500mA, making it suitable for medium power switching and amplification tasks. The device is housed in a TO-5AA metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 800mW, the 2N1893 is ideal for use in linear and switching applications, including signal amplification and driver circuits.
The 2N1893 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and a collector current rating of 500mA, making it suitable for medium power switching and amplification tasks. The device is housed in a TO-5AA metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 800mW, the 2N1893 is ideal for use in linear and switching applications, including signal amplification and driver circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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