2N1893
Tillverkare
HARRIS
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 80V 0.5A TO5
TRANS NPN 80V 0.5A TO5
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 500 mA 800 mW Genomgående hål TO-5
Bipolär (BJT) Transistor NPN 80 V 500 mA 800 mW Genomgående hål TO-5
Beskrivning (eng)
Beskrivning (eng)
The 2N1893 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and can handle a collector current of up to 500mA, making it suitable for medium power switching and amplification tasks. With a power dissipation capability of 800mW, this transistor is housed in a TO-5 metal can package, ensuring robust thermal performance and reliability. Its through-hole design facilitates easy integration into circuit boards, ideal for both prototyping and production.
The 2N1893 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and can handle a collector current of up to 500mA, making it suitable for medium power switching and amplification tasks. With a power dissipation capability of 800mW, this transistor is housed in a TO-5 metal can package, ensuring robust thermal performance and reliability. Its through-hole design facilitates easy integration into circuit boards, ideal for both prototyping and production.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Gustaf eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K