1N4448TR
Tillverkare
VISHAY
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP 100V 150MA DO35
DIODE GEN PURP 100V 150MA DO35
Detaljerad specifikation
Detaljerad specifikation
Diode 100 V 150mA Genomgående hål DO-204AH (DO-35)
Diode 100 V 150mA Genomgående hål DO-204AH (DO-35)
Beskrivning (eng)
Beskrivning (eng)
The 1N4448TR is a general-purpose silicon diode with a maximum repetitive peak reverse voltage of 100 V and a forward continuous current rating of 300 mA. It features a low forward voltage drop and fast switching capabilities, making it suitable for various applications in electronic circuits. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in compact designs.
The 1N4448TR is a general-purpose silicon diode with a maximum repetitive peak reverse voltage of 100 V and a forward continuous current rating of 300 mA. It features a low forward voltage drop and fast switching capabilities, making it suitable for various applications in electronic circuits. The diode is housed in a DO-35 (DO-204AH) package, ensuring reliable performance in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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