QSE122
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
SENSOR PHOTO 880NM SIDE VIEW RAD
SENSOR PHOTO 880NM SIDE VIEW RAD
Detailed specification
Detailed specification
Phototransistors 880nm Side View Radial, Side View
Phototransistors 880nm Side View Radial, Side View
Description
Description
The QSE122 is a silicon phototransistor designed for infrared detection at a peak sensitivity of 880 nm. It features a sidelooker package with a medium wide reception angle of 50°, high sensitivity, and a black epoxy encapsulation. This Pb-free device operates within a temperature range of -40 to +100 °C and has a power dissipation of 100 mW.
The QSE122 is a silicon phototransistor designed for infrared detection at a peak sensitivity of 880 nm. It features a sidelooker package with a medium wide reception angle of 50°, high sensitivity, and a black epoxy encapsulation. This Pb-free device operates within a temperature range of -40 to +100 °C and has a power dissipation of 100 mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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