PBRP123ET,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS PNP 40V TO236AB
TRANS PREBIAS PNP 40V TO236AB
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW surface-mounted TO-236AB
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW surface-mounted TO-236AB
Description
Description
The PBRP123ET is a pre-biased PNP bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage of 40 V and supports an output current of 600 mA. The device features built-in bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) and offers low collector-emitter saturation voltage (VCEsat) and high current gain (hFE), making it suitable for reducing component count and simplifying circuit design.
The PBRP123ET is a pre-biased PNP bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage of 40 V and supports an output current of 600 mA. The device features built-in bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) and offers low collector-emitter saturation voltage (VCEsat) and high current gain (hFE), making it suitable for reducing component count and simplifying circuit design.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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