PBHV9050T-QR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 500V 0.15A TO236AB
TRANS PNP 500V 0.15A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 500 V 150 mA 50MHz 300 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 500 V 150 mA 50MHz 300 mW surface-mounted TO-236AB
Description
Description
The PBHV9050T-QR is a PNP bipolar transistor designed for high-voltage applications, featuring a collector-emitter voltage of 500 V and a collector current of 150 mA. It operates with low VCEsat and high current gain, making it suitable for various electronic applications.
The PBHV9050T-QR is a PNP bipolar transistor designed for high-voltage applications, featuring a collector-emitter voltage of 500 V and a collector current of 150 mA. It operates with low VCEsat and high current gain, making it suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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