NSS35200CF8T1G
Manufacturer
SANYO
Data sheet
Data sheet
Specification
Specification
TRANS PNP 35V 2A CHIPFET
TRANS PNP 35V 2A CHIPFET
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 35 V 2 A 100 MHz 635 mW surface-mounted ChipFET™
Bipolar (BJT) Transistor PNP 35 V 2 A 100 MHz 635 mW surface-mounted ChipFET™
Description
Description
The NSS35200CF8T1G is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates at a maximum voltage of 35V and can handle a continuous current of up to 2A, making it suitable for various power management tasks. With a transition frequency of 100MHz and a power dissipation capability of 635 mW, this Surface Mount ChipFET™ device is optimized for compact designs. Its small footprint and efficient thermal performance make it ideal for modern electronic circuits requiring reliable switching and amplification.
The NSS35200CF8T1G is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates at a maximum voltage of 35V and can handle a continuous current of up to 2A, making it suitable for various power management tasks. With a transition frequency of 100MHz and a power dissipation capability of 635 mW, this Surface Mount ChipFET™ device is optimized for compact designs. Its small footprint and efficient thermal performance make it ideal for modern electronic circuits requiring reliable switching and amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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