NSS35200CF8T1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 35V 2A CHIPFET
TRANS PNP 35V 2A CHIPFET
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 35 V 2 A 100 MHz 635 mW surface-mounted ChipFET™
Bipolar (BJT) Transistor PNP 35 V 2 A 100 MHz 635 mW surface-mounted ChipFET™
Description
Description
The NSS35200CF8T1G is a PNP bipolar transistor designed for low voltage, high-speed switching applications. It features a collector-emitter voltage of 35 V, a continuous collector current of 2 A, and a maximum power dissipation of 635 mW. This ChipFET™ device operates at frequencies up to 100 MHz, making it suitable for efficient energy control in portable electronics.
The NSS35200CF8T1G is a PNP bipolar transistor designed for low voltage, high-speed switching applications. It features a collector-emitter voltage of 35 V, a continuous collector current of 2 A, and a maximum power dissipation of 635 mW. This ChipFET™ device operates at frequencies up to 100 MHz, making it suitable for efficient energy control in portable electronics.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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