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NSS35200CF8T1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
NSS35200CF8T1G is used in low voltage, high-speed switching applications, including DC-DC converters and power management in portable devices such as cellular phones, PDAs, and digital cameras. It is also applicable in automotive systems for airbag deployment and motor controls in mass storage devices.
Specification
Specification
TRANS PNP 35V 2A CHIPFET
TRANS PNP 35V 2A CHIPFET
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 35 V 2 A 100 MHz 635 mW surface-mounted ChipFET™
Bipolar (BJT) Transistor PNP 35 V 2 A 100 MHz 635 mW surface-mounted ChipFET™
Description
Description
The NSS35200CF8T1G is a PNP bipolar transistor designed for low voltage, high-speed switching applications. It features a collector-emitter voltage of 35 V, a continuous collector current of 2 A, and a maximum power dissipation of 635 mW. This ChipFET™ device operates at frequencies up to 100 MHz, making it suitable for efficient energy control in portable electronics.
The NSS35200CF8T1G is a PNP bipolar transistor designed for low voltage, high-speed switching applications. It features a collector-emitter voltage of 35 V, a continuous collector current of 2 A, and a maximum power dissipation of 635 mW. This ChipFET™ device operates at frequencies up to 100 MHz, making it suitable for efficient energy control in portable electronics.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
NSS35200CF8T1G is also available from the following manufacturers
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