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NP75P04YLG-E1-AY

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
NP75P04YLG is designed for automotive applications, particularly in high current switching scenarios. Its low on-state resistance and high power dissipation capabilities make it suitable for power management in automotive electronics, ensuring efficient operation under demanding conditions.
Specification
Specification
MOSFET P-CH 40V 75A 8HSON
MOSFET P-CH 40V 75A 8HSON
Detailed specification
Detailed specification
P-Channel 40 V 75A (Tc) 1W (Ta), 138W (Tc) surface-mounted 8-HSON
P-Channel 40 V 75A (Tc) 1W (Ta), 138W (Tc) surface-mounted 8-HSON
Description
Description
The NP75P04YLG is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a Drain Current rating of 75A. It has a low on-state resistance of RDS(on) = 9.7 mΩ at VGS = -10V and ID = -37.5A. The device is suitable for automotive applications and includes built-in ESD protection. It is housed in an 8-pin surface mount HSON package, with a total power dissipation of 138W at Tc = 25°C.
The NP75P04YLG is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a Drain Current rating of 75A. It has a low on-state resistance of RDS(on) = 9.7 mΩ at VGS = -10V and ID = -37.5A. The device is suitable for automotive applications and includes built-in ESD protection. It is housed in an 8-pin surface mount HSON package, with a total power dissipation of 138W at Tc = 25°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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