NP60N06VLK-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
P-TRS2 AUTOMOTIVE MOS
P-TRS2 AUTOMOTIVE MOS
Detailed specification
Detailed specification
N-Channel 60 V 60A (Tc) 1.2W (Ta), 105W (Tc) surface-mounted TO-252 (MP-3ZP)
N-Channel 60 V 60A (Tc) 1.2W (Ta), 105W (Tc) surface-mounted TO-252 (MP-3ZP)
Description
Description
The NP60N06VLK-E1-AY is an N-channel Power MOSFET designed for high current switching applications in automotive environments. It features a maximum Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 60 A at a case temperature (Tc) of 25°C. The device has a super low on-state resistance (RDS(on)) of 7.9 mΩ at VGS = 10 V and ID = 30 A, making it suitable for efficient power management. The TO-252 (MP-3ZP) package ensures reliable surface mount integration.
The NP60N06VLK-E1-AY is an N-channel Power MOSFET designed for high current switching applications in automotive environments. It features a maximum Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 60 A at a case temperature (Tc) of 25°C. The device has a super low on-state resistance (RDS(on)) of 7.9 mΩ at VGS = 10 V and ID = 30 A, making it suitable for efficient power management. The TO-252 (MP-3ZP) package ensures reliable surface mount integration.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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