NP20P06YLG-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 60V 20A 8HSON
MOSFET P-CH 60V 20A 8HSON
Detailed specification
Detailed specification
P-Channel 60 V 20A (Tc) 1W (Ta), 57W (Tc) surface-mounted 8-HSON (5x5.4 mm (0.20x0.21 in))
P-Channel 60 V 20A (Tc) 1W (Ta), 57W (Tc) surface-mounted 8-HSON (5x5.4 mm (0.20x0.21 in))
Description
Description
The NP20P06YLG is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of -60 V and a continuous Drain Current (ID) of -20 A. It has a low on-state resistance (RDS(on)) of 47 mΩ at VGS = -10 V and ID = -10 A. The device is housed in an 8-pin surface-mounted HSON package (5x5.4 mm) and is AEC-Q101 qualified for automotive applications.
The NP20P06YLG is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of -60 V and a continuous Drain Current (ID) of -20 A. It has a low on-state resistance (RDS(on)) of 47 mΩ at VGS = -10 V and ID = -10 A. The device is housed in an 8-pin surface-mounted HSON package (5x5.4 mm) and is AEC-Q101 qualified for automotive applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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