NP100P04PDG-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 40V 100A TO263
MOSFET P-CH 40V 100A TO263
Detailed specification
Detailed specification
P-Channel 40 V 100A (Tc) 1.8W (Ta), 200W (Tc) surface-mounted TO-263
P-Channel 40 V 100A (Tc) 1.8W (Ta), 200W (Tc) surface-mounted TO-263
Description
Description
The NP100P04PDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a continuous Drain Current of -100A. It has a super low on-state resistance of RDS(on) = 3.5 mΩ at VGS = -10V and ID = -50A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-263 package and is AEC-Q101 qualified.
The NP100P04PDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a continuous Drain Current of -100A. It has a super low on-state resistance of RDS(on) = 3.5 mΩ at VGS = -10V and ID = -50A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-263 package and is AEC-Q101 qualified.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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