MPSA06
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
BJT TO92 80V NPN 0.625W 150C
BJT TO92 80V NPN 0.625W 150C
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Through Hole TO-92-3
Description
Description
The MPSA06 is a general-purpose NPN bipolar junction transistor (BJT) designed for amplifier applications. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 500 mA, and a power dissipation of 625 mW. The device operates at a maximum junction temperature of 150°C and has a frequency response of up to 100 MHz, making it suitable for various electronic applications.
The MPSA06 is a general-purpose NPN bipolar junction transistor (BJT) designed for amplifier applications. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 500 mA, and a power dissipation of 625 mW. The device operates at a maximum junction temperature of 150°C and has a frequency response of up to 100 MHz, making it suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
MPSA06 is also available from the following manufacturersContact sales
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