MPSA06
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT TO92 80V 500MA NPN 0.625W
BJT TO92 80V 500MA NPN 0.625W
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 500 mA 100 MHz 625 mW Through Hole TO-92
Bipolar (BJT) Transistor NPN 80 V 500 mA 100 MHz 625 mW Through Hole TO-92
Description
Description
The MPSA06 is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 500 mA, and a power dissipation (Ptot) of 625 mW. With a gain (hFE) greater than 100 and a transition frequency (fT) of 100 MHz, it is suitable for signal processing, switching, and amplification applications. The maximum junction temperature (Tjmax) is 150°C.
The MPSA06 is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 500 mA, and a power dissipation (Ptot) of 625 mW. With a gain (hFE) greater than 100 and a transition frequency (fT) of 100 MHz, it is suitable for signal processing, switching, and amplification applications. The maximum junction temperature (Tjmax) is 150°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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