MMBT3904
Manufacturer
TAIWAN SEMICONDUCTORS
Specification
Specification
SOT-23, 60V, 0.2A, NPN BIPOLAR T
SOT-23, 60V, 0.2A, NPN BIPOLAR T
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 200 mA 250MHz 300 mW surface-mounted SOT-23
Bipolar (BJT) Transistor NPN 40 V 200 mA 250MHz 300 mW surface-mounted SOT-23
Description
Description
The MMBT3904 is a high-performance NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 0.2A, making it suitable for low to medium power applications. With a transition frequency of 250MHz and a power dissipation capability of 300mW, this transistor is ideal for RF and general-purpose applications. Packaged in a compact SOT-23 surface mount configuration, it ensures efficient space utilization on PCBs.
The MMBT3904 is a high-performance NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 0.2A, making it suitable for low to medium power applications. With a transition frequency of 250MHz and a power dissipation capability of 300mW, this transistor is ideal for RF and general-purpose applications. Packaged in a compact SOT-23 surface mount configuration, it ensures efficient space utilization on PCBs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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