MMBT3904
Manufacturer
ANBON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
200MA SILICON NPN EPITAXIAL PLAN
200MA SILICON NPN EPITAXIAL PLAN
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 200 mA 250MHz 300 mW surface-mounted SOT-23
Bipolar (BJT) Transistor NPN 40 V 200 mA 250MHz 300 mW surface-mounted SOT-23
Description
Description
The MMBT3904 is a silicon NPN epitaxial planar bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 200 mA, a collector-emitter voltage rating of 40 V, and a transition frequency of 250 MHz, making it suitable for high-speed applications. The device is housed in a compact SOT-23 surface mount package, ensuring efficient use of board space while providing reliable performance in various electronic circuits.
The MMBT3904 is a silicon NPN epitaxial planar bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 200 mA, a collector-emitter voltage rating of 40 V, and a transition frequency of 250 MHz, making it suitable for high-speed applications. The device is housed in a compact SOT-23 surface mount package, ensuring efficient use of board space while providing reliable performance in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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