MJD42CJ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 100V 6A DPAK
TRANS PNP 100V 6A DPAK
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 100 V 6 A 3 MHz 1.6 W surface-mounted DPAK
Bipolar (BJT) Transistor PNP 100 V 6 A 3 MHz 1.6 W surface-mounted DPAK
Description
Description
The MJD42CJ is a high power PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 6 A, and a power dissipation capability of 1.6 W. With fast switching speeds and low saturation voltage, it is suitable for various power management applications.
The MJD42CJ is a high power PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 6 A, and a power dissipation capability of 1.6 W. With fast switching speeds and low saturation voltage, it is suitable for various power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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