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MB85R4M2TFN-G-JAE2

Manufacturer

FUJITSU

data-sheet
Data sheet
Data sheet
MB85R4M2TFN-G-JAE2 is designed for industrial applications requiring non-volatile memory solutions. Its high endurance and low power characteristics make it suitable for data logging, automotive systems, and consumer electronics where reliability and longevity are critical.
Specification
Specification
IC FRAM 4MBIT PAR 44TSOP
IC FRAM 4MBIT PAR 44TSOP
Detailed specification
Detailed specification
FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 150 ns 44-TSOP
FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 150 ns 44-TSOP
Description
Description
The MB85R4M2TFN-G-JAE2 is a 4Mbit FRAM (Ferroelectric RAM) memory IC featuring a parallel interface with a read/write endurance of 10^13 cycles. It operates at a voltage range of 1.8V to 3.6V and offers data retention of up to 200 years at +35 °C. Packaged in a 44-pin TSOP, it supports low power consumption with a maximum operating current of 20 mA and standby current of 150 μA.
The MB85R4M2TFN-G-JAE2 is a 4Mbit FRAM (Ferroelectric RAM) memory IC featuring a parallel interface with a read/write endurance of 10^13 cycles. It operates at a voltage range of 1.8V to 3.6V and offers data retention of up to 200 years at +35 °C. Packaged in a 44-pin TSOP, it supports low power consumption with a maximum operating current of 20 mA and standby current of 150 μA.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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