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KSB1151YS

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
KSB1151YS is used in industrial and consumer electronics applications, particularly in power management and signal amplification circuits. Its robust specifications make it ideal for use in power supplies, motor control, and audio amplification systems.
Specification
Specification
TRANS PNP 60V 5A TO126-3
TRANS PNP 60V 5A TO126-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3
Description
Description
The KSB1151YS is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 5 A, and a power dissipation capability of 1.3 W. This TO-126-3 through-hole device is suitable for various electronic circuits requiring efficient switching and amplification.
The KSB1151YS is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 5 A, and a power dissipation capability of 1.3 W. This TO-126-3 through-hole device is suitable for various electronic circuits requiring efficient switching and amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
KSB1151YS is also available from the following manufacturers
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